On March 29, 2026, our company successfully developed a gallium nitride (GaN) radio frequency power amplifier.
Hxwave Technology Co., Ltd
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For aeronautical air-to-ground wireless networks requiring coverage of 100–280 km, high demands are placed on the operating bandwidth and output power of radio frequency power amplifiers. The wide bandwidth and high-power characteristics of gallium nitride (GaN) RF power amplifiers can meet these requirements.
Aeronautical air-to-ground wireless networks are required to support the L-band at 1.1–1.5 GHz, with RF power amplifiers delivering an output power of 43 dBm at a supply voltage of 28 V. Our newly launched GaN RF power amplifier is based on domestic materials and processes using 0.4/0.25 μm GaN HEMT technology. It supports 28 V/48 V supply voltages, covers multiple frequency ranges, offers various power levels and package types, and is suitable for both pulsed and continuous wave operation.
Among them, the ZDN8041 model covers the DC–4 GHz frequency range, provides 90 W of saturated power at 28 V, and fully satisfies the above requirements.
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