HX116691C-218P2 is a GaN MMIC high-power amplifier covering 2GHz to 18GHz. It features 17dB power gain, 34dBm saturated output power, and 20% power added efficiency. Adopting 0.15μm GaN HEMT process and backside via grounding, it supports CW and pulse modes with 28V drain voltage and -1.8V gate voltage. The chip size is 2.90×2.50×0.08mm, widely used in microwave transceiver modules and high-power transmitters.